- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369718 > LBE2003S (NXP SEMICONDUCTORS) NPN microwave power transistors PDF資料下載
參數(shù)資料
| 型號： | LBE2003S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-441A, 4 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 126K |
| 代理商： | LBE2003S |
1997 Mar 03
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S;
LBE2009S; LCE2009S
FEATURES
Diffused emitter ballasting resistors
Self-aligned process entirely ion implanted and gold
metallization
Optimum temperature profile
Excellent performance and reliability.
APPLICATIONS
Common emitter class-A linear power amplifiers up
to 4 GHz.
DESCRIPTION
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.The LCE2009S is a
maintenance type in a SOT442A metal ceramic capstan
package.
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 Simplified outline and symbol (SOT441A).
Marking code
: LBE2003S = 407; LBE2009S = 409.
handbook, halfpage
e
c
b
MAM329
Top view
1
4
3
2
Fig.2 Simplified outline and symbol (SOT442A).
Marking code
: LCE2009S = 408.
handbook, halfpage
e
c
b
MAM330
Top view
1
4
3
2
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A amplifier.
TYPE NUMBER
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(mW)
≥
200
G
po
(dB)
≥
10
Z
i
(
)
Z
L
(
)
LBE2003S
LBE2009S
LCE2009S
Class-A (CW) linear
2
18
30
6.2 + j30
17.5 + j7
Class-A (CW) linear
2
18
110
≥
700
≥
9
7.5 + j15
17.5 + j39
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBX2000 | Peripheral IC |
| LBX2100 | Peripheral IC |
| LC-155B2J1T | Telecommunication IC |
| LC-155B2M1T | Telecommunication IC |
| LC-FSLC-045P-0407A | 450 MHz Band Chip Multilayer 90deg. / 3dB Splitter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBE2009S | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistors |
| LBE63C | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:Power TOPLED with Lens Enhanced Optical Power LED (ATON) |
| LBE63C-S2U1-35 | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:Power TOPLED with Lens Enhanced Optical Power LED (ATON) |
| LBE63C-T2V1-35 | 制造商:OSRAM 功能描述:Q65110A1852_POWER TOPLED - ROHS 制造商:OSRAM 功能描述:Power TOPLED Blue,LB E63C-T2V1-35 |
| LBE63C-T2V1-35-R33-Z | 制造商:OSRAM 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。