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參數(shù)資料
| 型號： | LBAT54WT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | 肖特基勢壘二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | LBAT54WT1G |
LESHAN RADIO COMPANY, LTD.
LBAT54WT1–1/3
1
3
2
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Symbol
V
R
P
F
Max
30
Unit
Volts
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
200
1.6
mW
mW/°C
mA
°C
°C
I
F
T
J
T
stg
200Max
125Max
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
30
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
Max
—
10
2.0
0.24
0.5
1.0
Unit
Volts
pF
μ
Adc
Vdc
Vdc
Vdc
Reverse Breakdown Voltage (I
R
= 10
μ
A)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
t
rr
—
—
5.0
ns
V
F
V
F
I
F
I
FRM
I
FSM
—
—
—
—
—
0.29
0.35
—
—
—
0.32
0.40
200
300
600
Vdc
Vdc
mAdc
mAdc
mAdc
LBAT54WT1
SOT–323 (SC–70)
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Minia-
ture surface mount package is excellent for hand held and por-
table applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
Pb-Free package is available
30 VOLTS SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
Schottky Barrier Diodes
1
ANODE
3
CATHODE
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAT54WT1
B4
3000/Tape&Reel
LBAT54WT1G
(Pb-Free)
B4
3000/Tape&Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBAT60BT1 | Silicon Schottky Diode |
| LBAV70LT1 | Monolithic Dual Switching Diode Common Cathode |
| LBAV70LT1G | Monolithic Dual Switching Diode Common Cathode |
| LBAV70WT1 | Dual Switching Diodes |
| LBAV70WT1G | Dual Switching Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBAT54WT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Diodes Extremely Fast Switching Speed |
| LBAT54WT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Diodes Extremely Fast Switching Speed |
| LBAT54XV2T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Diodes Extremely Fast Switching Speed |
| LBAT54XV2T3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Diodes Extremely Fast Switching Speed |
| LBAT60BT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Schottky Diode |
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