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參數(shù)資料
| 型號： | LBAT60BT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Schottky Diode |
| 中文描述： | 硅肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 142K |
| 代理商： | LBAT60BT1 |
●
High current rectifier Schottky diode with
very low V
F
drop (typ. 0.24 V at I
F
= 10mA)
●
For power supply applications
●
For clamping and protection in
low voltage applications
●
For detection and step-up-conversion
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Symbol
V
R
Forward current
Unit
V
I
F
Surge forward current, (t <10ms)
Total power dissipation
T
S
< 28°C
I
FSM
Tj
Tstg
Driver Marking
LBAT60BT1=5
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
min.
typ.
max.
DC Characteristics
Reverse current
VR = 5 V
VR = 8 V
VR = 5 V, TA = 80 °C
VR = 8 V, TA = 80 °C
Forward voltage
IF = 10 mA
IR
μA
–
–
–
–
5
15
25
800
1500
10
100
410
VF
V
0.2
0.26
0.32
0.36
0.24
0.32
0.4
0.48
0.3
0.38
0.5
0.6
AC Characteristics
Diode capacitance
V
R
= 5 V, f = 1 MHz
C
T
12
25
30
P
f
LBAT60BT1–1/4
Junction temperature
Storage temperature
°C
P
TOT
mW
1350
150
-55–150
Value
10
3
5
Silicon Schottky Diode
LBAT60BT1
A
SOD323
Parameter
Diode reverse voltage
Parameter
Symbol
Values
Unit
IF = 100 mA
IF = 500 mA
IF = 1000 mA
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