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參數(shù)資料
| 型號： | L9903 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MOTOR BRIDGE CONTROLLER |
| 中文描述： | 汽車橋控制器 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 131K |
| 代理商： | L9903 |
L9903
6/17
t
Kr
Rise time
V
VS
= 13.5V; Fig. 1
External loads at K-line:
R
K
= 510
pull up
to V
VS
C
K
= 2.2nF to GND
2
6
μ
s
t
Kf
Fall time
2
6
μ
s
t
KH
Switch high delay time
4
17
μ
s
t
KL
Switch low delay time
4
17
μ
s
t
SH
Short circuit detection time
V
VS
= 13.5V;
TX = LOW
V
K
> 0.55 · V
VS
10
40
μ
s
Charge pump
V
CP
Charge pump voltage
V
VS
= 8V
V
VS
= 13.5V
V
VS
= 20V
V
VS
+
7V
V
VS
+
10V
V
VS
+
10V
V
VS
+
14V
V
VS
+
14V
V
VS
+14V
I
CP
Charging current
V
CP
= V
VS
+ 8V
V
VS
= 13.5V
-50
-75
μ
A
t
CP
Charging time
2)
V
CP
= V
VS
+ 8V
V
VS
= 13.5V
C
CP
= 10nF
1.2
4
ms
f
CP
Charge pump frequency
V
VS
= 13.5V
250
500
750
kHz
Drivers for external highside power MOS
V
CB1
V
CB2
Bootstrap voltage
V
VS
= 8V; I
CBX
= 0; V
SX
= 0
V
VS
=13.5V; I
CBX
= 0; V
SX
= 0
V
VS
= 20V; I
CBX
= 0; V
SX
= 0
7.5
10
10
14
14
14
V
V
V
R
GH1L
R
GH2L
ON-resistance of SINK stage
V
CBX
= 8V; V
SX
= 0
I
GHX
= 50mA; T
J
= 25
°
C
10
W
V
CBX
= 8V; V
SX
= 0
I
GHX
= 50mA; T
J
= 125
°
C
20
W
R
GH1H
R
GH2H
ON-resistance of SOURCE stage
I
GHX
= -50mA; T
J
= 25
°
C
I
GHX
= -50mA; T
J
= 125
°
C
10
20
W
W
V
GH1H
V
GH2H
Gate ONvoltage (SOURCE)
V
VS
= V
SX
= 8V;I
GHX
= 0;
C
CBX
= 0.1
μ
F
V
VS
+6.5V
V
VS
+14V
V
VS
= V
SX
= 13.5V; I
GHX
= 0;
C
CBX
= 0.1
μ
F
V
VS
+
10V
V
VS
+14V
V
VS
= V
SX
= 20V; I
GHX
= 0;
C
CBX
= 0.1
μ
F
V
VS
+10V
V
VS
+14V
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(continued)
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