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參數(shù)資料
| 型號： | L9380 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Triple High-Side MOSFET Driver(三高邊MOSFET驅(qū)動器) |
| 中文描述： | 三高側(cè)MOSFET驅(qū)動器（三高邊MOSFET的驅(qū)動器） |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 196K |
| 代理商： | L9380 |
pacitor C
CP
of 33nF in less than 20ms up to 8V
above V
S
. The value of C
CP
depends on the input
capacitance of the external MOS and the decay
of the charge pump voltage down to that value
where no significant influence on the application
occurs.
The necessary charging time for C
CP
has to be
respected in the sequence of the input control sig-
nals. As a consequence the lower gate to source
voltage can cause a higher drop across the
Power-MOS and get into overload condition. In
this case the overload protection timer will start.
After the protection time the concerned channel
will be switched off. Channel 3 is not equipped
with an overload protection. The same situation
can occur due to a discharge of the storage ca-
pacitor caused by the gate short to ground. The
gate driver that is supplied from the pin CP, which
is the charge pump output, has a sink and source
current capability of 3mA. For a short-circuit of the
load (source to ground) the L9380 has no gate to
source limitation. The gate source protection must
be done externally.
Channel 1 and 2 provide drain to source voltage
sensing possibility with programmable shut-off
delay when the activation threshold was ex-
ceeded. This threshold V
DSmin
is set by the exter-
nal resistor R
D
. The bias current flowing through
this resistor is determined by the programming re-
sistor R
PR
. This external resistor R
PR
defines also
the charge and discharge current of the timer ca-
pacitor C
CT
. The drain to source threshold V
DSmin
and the timer shut off delay time T
off
can be cal-
culated:
V
DS
min = V
PR
(R
D
/R
PR
)
T
off
= 4.4 C
T
R
PR
V
IN
V
G
V
S
V
T
4.4V
0.4V
V
DSmin
t
d
t
d
T
off
D98AT392
Figure 4.
Timing Characteristic.
I
D
I
PR
+ I
Dmax
I
Smax
I
S
V
D
>V
S
V
S
>V
D
V
S
=V
D
I
PR
0
D98AT393
Figure 5.
Drain, source input current.
L9380
5/12
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相關(guān)代理商/技術(shù)參數(shù) |
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| L9380_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Triple high-side MOSFET driver |
| L9380-LF | 功能描述:功率驅(qū)動器IC Triple High Side MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L9380-TR | 功能描述:功率驅(qū)動器IC TRIPLE HIGH-SIDE MOSFET DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L9380-TR-LF | 功能描述:功率驅(qū)動器IC Triple High Side MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L9386 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Dual intelligent power low side switch |
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