參數(shù)資料
型號: L9380
廠商: 意法半導(dǎo)體
英文描述: Triple High-Side MOSFET Driver(三高邊MOSFET驅(qū)動器)
中文描述: 三高側(cè)MOSFET驅(qū)動器(三高邊MOSFET的驅(qū)動器)
文件頁數(shù): 4/12頁
文件大?。?/td> 196K
代理商: L9380
FUNCTIONAL DESCRIPTION
The Triple High-Side Power-MOS Driver features
all necessary control and protection functions to
switch on three Power-MOS transistors operating
as High-Side switches in automotive electronic
control units. The key application field is relays re-
placement in systems where high current loads,
usually motors with nominal currents of about 40A
connected to ground, has to be switched.
A high signal at the EN pin enables all three
channels. With enable low gates are clamped to
ground. In this condition the gate sink current is
higher than the specified 3mA. An enable low sig-
nal makes also a reset of the timer.
A low signal at the inputs switch on the gates of
the external MOS. A short circuit at the input
leads to permanent activation of the concerned
channel. In this case the device can be disabled
with the enable pin. The charge pump loading is
not influenced due to the enable input.
An external N-channel MOS driver in high side
configuration needs a gate driving voltage higher
than V
S
. It is generated by means of a charge
pump with integrated charge transfer capacitors
and one external charge storage capacitor C
CP
.
The charge pump is dimensioned to load a ca-
ELECTRICAL CHARACTERISTICS
(7V
V
S
18.5V; -40°C
T
J
150°C, unless otherwise specified.)
Symbol
SUPPLY
I
VS
CHARGE PUMP
V
CP
t
CP
V
SCP off
V
SCP hys
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Operating Supply Current
V
S
= 14V
2.5
mA
Charge Pump Voltage Above V
S
Charging Time
Overvoltage Shut down
Overvoltage Shut down
Hysteresis
1)
Charge Pump frequency
1)
GATE DRIVERS
I
GSo
Gate Source Current
I
GSi
Gate Sink Current
DRAIN - SOURCE SENSING
V
PR
Bias Current Programming
voltage
I
D Leak
Drain pin leakage current
I
D
Drain pin bias current
I
Smax
Source pin input current
V
HYST
Comparator Hysteresis
TIMER
V
THi
Timer threshold high
V
TLo
Timer threshold low
I
T
Timer Current
8
17
200
30
1000
V
μ
s
V
mV
V
CP
= V
S
+ 8V C
CP
= 100pF
20
50
200
f
CP
100
250
400
KHz
V
G
= V
S
V
G
0.8V
-5
1
-3
3
-1
5
mA
mA
10
μ
A
I
PR
100
μ
A; V
D
4V
1.8
2
2.2
V
V
S
= 0V; V
D
=14V
V
S
V
D
+ 1V; V
D
5V
V
S
V
D
+ 1V; V
D
7V
0
5
μ
A
0.9 I
PR
10
1.1 I
PR
60
μ
A
mV
20
4
4.4
0.4
4.8
0.5
V
V
0.3
IN = 5V; V
T
= 2V
IN = 0V; V
S
< V
D
;
V
D
5V; V
T
= 2V
0.4 I
PR
-0.6 I
PR
0.6 I
PR
-0.4 I
PR
INPUTS
V
LOW
V
HIGH
V
INhys
Input Enable low voltage
Input Enable high voltage
Input Enable Hysteresis
(1)
Input source current
Enable sink current
Transfer time IN/ENABLE
-0.3
3
50
-30
5
1
7
V
V
200
500
-5
30
2.5
mV
μ
A
μ
A
μ
s
I
IN
I
EN
t
d
V
IN
3V
V
EN
1V
V
S
= 14V V
G
= V
S
; OPEN GATE
NOTE: Not measured guaranteed by design
Function is given for supply voltage down to 5.5V. Function means: The channels are controlled from the
inputs, some other parameters may exceed the limit. In this case the programming voltage and timer
threshold will be lower. This leads to a lower protection threshold and time.
L9380
4/12
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L9380_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Triple high-side MOSFET driver
L9380-LF 功能描述:功率驅(qū)動器IC Triple High Side MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L9380-TR 功能描述:功率驅(qū)動器IC TRIPLE HIGH-SIDE MOSFET DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L9380-TR-LF 功能描述:功率驅(qū)動器IC Triple High Side MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L9386 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Dual intelligent power low side switch