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參數資料
| 型號： | L7585G |
| 廠商： | Lineage Power |
| 英文描述： | Full-Feature, Low-Power SLIC and Switch(特點齊全的低功耗用戶接口和開關) |
| 中文描述： | 全功能，低功耗SLIC和開關（特點齊全的低功耗用戶接口和開關） |
| 文件頁數： | 15/22頁 |
| 文件大?。?/td> | 560K |
| 代理商： | L7585G |
Lucent Technologies Inc.
15
Data Sheet
May 2000
L7585G Full-Feature, Low-Power SLIC and Switch
Electrical Characteristics
(continued)
Table 12. Ringing Return Access Switch (SW1)
1.
At 25 °C, maximum voltage rating has a temperature coefficient of +0.167 V/°C.
2. This parameter is not tested in production; it is guaranteed by design and device characterization.
3. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dt sensitivity at 200 V/μs typical with no switch turn-on. In the case of
dV/dt induced turn-on at higher dV/dt and amplitude, the design objective is no damage to at least 2000 V/μs and full voltage. A known con-
dition that can cause damage is initial current flow prior to the application of the dV/dt and the sudden application of reverse bias with dV/dt
induced switch turn-off. In this case, no damage will occur for dV/dt up to 2000 V/μs as guaranteed by design and characterization.
Table 13. Test-In Access Switches (SW3 and SW6)
1. At 25 °C, maximum voltage rating has a temperature coefficient of +0.167 V/°C.
2. This parameter is not tested in production; it is guaranteed by design and device characterization.
3. Test in access switches current limit will be > tip and ring break switches current limit.
4. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dt sensitivity at 200 V/μs typical with no switch turn-on. In the case of
dV/dt induced turn-on at higher dV/dt and amplitude, the design objective is no damage to at least 2000 V/μs and full voltage. A known con-
dition that can cause damage is initial current flow prior to the application of the dV/dt and the sudden application of reverse bias with dV/dt
induced switch turn-off. In this case, no damage will occur for dV/dt up to 2000 V/μs as guaranteed by design and characterization.
Parameter
Min
Typ
Max
Unit
Off-state:
Maximum Differential Voltage
dc Leakage Current (V
SW
= ±320 V)
Feedthrough Capacitance
2
On-state (See On-State Switch V-I Characteristics section.):
Resistance (R
ON
)
Maximum Differential Voltage (V
max
)
Foldback Voltage Breakpoint 1 (V
1
)
Foldback Voltage Breakpoint 2 (V
2
)
Current Limit (I
LIMIT1
)
Current Limit (I
LIMIT2
)
dV/dT Sensitivity
2, 3
—
—
—
—
—
—
±320
1
±10
15
V
μA
pF
—
—
120
200
120
2
—
45
—
—
—
220
—
200
90
320
1
—
—
360
—
2000
V
V
V
mA
mA
V/μs
Parameter
Min
Typ
Max
Unit
Off-state:
Maximum Differential Voltage
dc Leakage Current (V
SW
= ±320 V)
Feedthrough Capacitance
2
On-state (See On-State Switch V-I Characteristics section.):
Resistance (R
ON
)
Maximum Differential Voltage (V
max
)
Current Limit (I
LIMIT
) Switches SW3 and SW6
3
dV/dT Sensitivity
2, 4
—
—
—
—
—
—
±320
1
±10
15
V
μA
pF
—
—
85
—
45
—
—
200
90
60
—
2000
V
mA
V/μs
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