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參數(shù)資料
| 型號(hào)： | L6599TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High-voltage resonant controller |
| 中文描述： | 高壓諧振控制器 |
| 文件頁(yè)數(shù)： | 8/36頁(yè) |
| 文件大小： | 591K |
| 代理商： | L6599TR |
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Electrical characteristics
L6599
8/36
5
Electrical characteristics
T
J
= 0 to 105°C, V
CC
= 15V, V
BOOT
= 15V, C
HVG
= C
LVG
= 1nF; C
F
= 470pF;
R
RFmin
= 12k
; unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
IC supply voltage
V
CC
Operating range
After device turn-on
8.85
16
V
V
CC(ON)
Turn-ON threshold
Voltage rising
10
10.7
11.4
V
V
CC(OFF)
Turn-OFF threshold
Voltage falling
7.45
8.15
8.85
V
Hys
Hysteresis
2.55
V
V
Z
V
CC
clamp voltage
Iclamp = 10mA
16
17
17.9
V
Supply current
I
start-up
Start-up current
Before device turn-ON
V
CC
= V
CC(ON)
- 0.2V
200
250
μA
I
q
Quiescent current
Device ON, V
STBY
= 1V
1.5
2
mA
I
op
Operating current
Device ON,
V
STBY
= V
RFmin
3.5
5
mA
I
q
Residual consumption
V
DIS
> 1.85V or V
DELAY
> 3.5V or V
LINE
< 1.25 V
or V
LINE
= V
clamp
300
400
μA
High-side floating gate-drive supply
I
LKBOOT
V
BOOT
pin leakage
current
V
BOOT
= 580V
5
μA
I
LKOUT
OUT pin leakage current V
OUT
= 562V
5
μA
r
DS(on)
Synchronous bootstrap
diode ON-resistance
V
LVG
= High
150
Overcurrent comparator
I
ISEN
Input bias current
V
ISEN
= 0 to V
ISENdis
-1
μA
t
LEB
Leading edge blanking
After V
HVG
and V
LVG
low-to-high transition
250
ns
V
ISENx
Frequency shift
threshold
Voltage rising
(1)
0.76
0.8
0.84
V
Hysteresis
Voltage falling
50
mV
V
ISENdis
Latch OFF threshold
Voltage rising
(1)
1.44
1.5
1.56
V
td
(H-L)
Delay to output
300
400
ns
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