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參數(shù)資料
| 型號(hào)： | L6599TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High-voltage resonant controller |
| 中文描述： | 高壓諧振控制器 |
| 文件頁數(shù)： | 6/36頁 |
| 文件大?。?/td> | 591K |
| 代理商： | L6599TR |
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Typical system block diagram
L6599
6/36
3
Typical system block diagram
Figure 2.
Typical system block diagram
11
LVG
Low-side gate-drive output. The driver is capable of 0.3A min. source and 0.8A min. sink
peak current to drive the lower MOSFET of the half-bridge leg. The pin is actively pulled to
GND during UVLO.
12
V
CC
Supply Voltage of both the signal part of the IC and the low-side gate driver. Sometimes a
small bypass capacitor (0.1μF typ.) to GND might be useful to get a clean bias voltage for
the signal part of the IC.
13
N.C.
High-voltage spacer. The pin is not internally connected to isolate the high-voltage pin and
ease compliance with safety regulations (creepage distance) on the PCB.
14
OUT
High-side gate-drive floating ground. Current return for the high-side gate-drive current.
Layout carefully the connection of this pin to avoid too large spikes below ground.
15
HVG
High-side floating gate-drive output. The driver is capable of 0.3A min. source and 0.8A min.
sink peak current to drive the upper MOSFET of the half-bridge leg. A resistor internally
connected to pin 14 (OUT) ensures that the pin is not floating during UVLO.
16
VBOOT
High-side gate-drive floating supply Voltage. The bootstrap capacitor connected between
this pin and pin 14 (OUT) is fed by an internal synchronous bootstrap diode driven in-phase
with the low-side gate-drive. This patented structure replaces the normally used external
diode.
Table 1.
Pin functions
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