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參數(shù)資料
| 型號： | L6569A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| 中文描述： | 高壓半橋驅(qū)動器，振蕩器 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 110K |
| 代理商： | L6569A |
L6569 L6569A
4/13
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Where R
F
and C
F
are the external resistor and capacitor.
The device can be driven in ”shut down” condition keeping the C
F
pin close to GND, but some cares have to be
taken:
1. When C
F
is to GND the high side driver is off and the low side is on
2. The forceddischarge of the oscillator capacitor C
F
mustnot be shorter than 1us: a simple way to do this is to
limit the current discharge with a resistive path imposing R · C
F
>1
μ
s (see fig.1)
Figure 1.
V
RFO
N
2
RF High Level Output Voltage
I
RF
= 1mA
V
S
-0.05
V
S
-0.2
V
V
RF OFF
RF Low Level Output Voltage
I
RF
= -1mA
50
200
mV
V
CFU
3
CF Upper Threshold
7.7
8
8.2
V
V
CFL
CF Lower Threshold
3.80
4
4.3
V
t
d
Internal Dead Time
0.85
1.25
1.65
μ
s
DC
Duty Cycle, Ratio Between Dead
Time + Conduction Time of High
Side and Low Side Drivers
0.45
0.5
0.55
R
ON
On resistance of Boostrap
LDMOS
120
V
BC
Boostrap Voltage before UVLO
V
S
= 8.2
2.5
3.6
V
I
AVE
1
Average Current from Vs
No Load, fs = 60KHz
1.2
1.5
mA
f
out
6
Oscillation Frequency
R
T
= 12K; C
T
= 1nF
57
60
63
kHz
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
f
OSC
2 R
F
C
F
In2
-----------------------------------------
1.3863 R
F
C
F
------------------------------------------
=
=
R
F
C
F
GND
M
1
2
3
4
8
7
6
5
fault signal
R
ELECTRICAL CHARACTERISTCS
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6569AD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6569D | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571A | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571AD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571BD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6569A | 制造商:STMicroelectronics 功能描述:IC HALF BRIDGE+OSC 6569 DIP8 |
| L6569AD | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6569AD | 制造商:STMicroelectronics 功能描述:HALF BRIDGE+OSC SMD 6569 SOIC8 |
| L6569AD013TR | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6569D | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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