- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384585 > L6569A (意法半導(dǎo)體) HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PDF資料下載
參數(shù)資料
| 型號： | L6569A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| 中文描述： | 高壓半橋驅(qū)動器，振蕩器 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 110K |
| 代理商： | L6569A |
3/13
L6569 L6569A
PIN FUNCTION
ELECTRICAL CHARACTERISTCS
(V
S
= 12V; V
BOOT
- V
OUT
= 12V; T
j
= 25
°
C; unless otherwise specified.)
N
°
Pin
Description
1
VS
Supply input voltage with internal clamp [typ.15.6V]
2
RF
Oscillator timing resistor pin.
A buffer set alternatively to V
S
and GND can provide current to the external resistor RF
connected between pin 2 and 3.
Alternatively, the signal on pin 2 can be used also to driveanother IC (i.e. another L6569 to drive
a full H-bridge)
3
CF
Oscillator timing capacitor pin.
A capacitor connected between this pin and GND fixes (together with R
F
) the oscillating
frequency
Alternatively an external logic signal can be applied to the pin to drive the IC.
4
GND
Ground
5
LVG
Low side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
6
OUT
Upper driver floating reference
7
HVG
High side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
8
BOOT
Bootstrap voltage supply.
It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin
6 can be fed by an internal structure named “bootstrap driver” (a patented structure). This
structure can replace the external bootstrap diode.
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
SUVP
1
VS Turn On Threshold
8.3
9
9.7
V
V
SUVN
VS Turn Off Threshold
7.3
8
8.7
V
V
SUVH
VS Hysteresis
0.7
1
1.3
V
V
CL
VS Clamping Voltage
I
S
= 5mA
14.6
15.6
16.6
V
I
SU
Start Up Current
V
S
< V
SUVN
150
250
μ
A
I
q
Quiescent Current
V
S
> V
SUVP
500
700
μ
A
I
BOOTLK
8
Leakage Current BOOTpin vs
GND
V
BOOT
= 580V
5
μ
A
I
OUTLK
6
Leakage Current OUT pin vs
GND
V
OUT
= 562V
5
μ
A
I
HVGSO
7
High Side Driver Source Current
V
HVG
= 6V
110
175
mA
I
HVG SI
High Side Driver Sink Current
V
HVG
= 6V
190
275
mA
I
LVG SO
5
Low Side Driver Source Current
V
LVG
= 6V
110
175
mA
I
LVGS
I
Low Side Driver Sink Current
V
LVG
= 6V
190
275
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6569AD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6569D | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571A | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571AD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6571BD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6569A | 制造商:STMicroelectronics 功能描述:IC HALF BRIDGE+OSC 6569 DIP8 |
| L6569AD | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6569AD | 制造商:STMicroelectronics 功能描述:HALF BRIDGE+OSC SMD 6569 SOIC8 |
| L6569AD013TR | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6569D | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。