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參數(shù)資料
| 型號(hào)： | L6561D013TR |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | POWER FACTOR CORRECTOR |
| 中文描述： | 功率因數(shù)校正 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | L6561D013TR |
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L6561
6/13
Figure 6. Typical Application Circuit (80W, 110VAC)
Figure 7. Typical Application Circuit (120W, 220VAC)
Figure 8. Typical Application Circuit (80W, Wide-range Mains)
8
3
BRIDGE
4 x 1N4007
R9 (*)
950K
C1
1
μ
F
250V
R10
10K
C2
22
μ
F
25V
FUSE 4A/250V
Vac
(85V to 135V)
R3 (*)
240K
D3 1N4150
D2
1N5248B
R2
100
10nF
C6
R1
T
5
6
L6561
7
2
1
C3 680nF
R5
MOS
STP7NA40
D1 BYT03-400
R7 (*)
950K
C5
100
μ
F
315V
Vo=240V
Po=80W
+
-
D97IN549B
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A7)
primary 90T of Litz wire 10 x 0.2mm
secondary 11T of #27 AWG (0.15mm)
gap 1.8mm for a total primary inductance of 0.7mH
R6 (*)
0.31
1W
R8
10K
1%
+
-
C7
10nF
NTC
4
(*) R3 = 2 x 120K
R6 = 0.619
/2
R7 = 2 x 475K
, 1%
R9 = 2 x 475K
10
68K
8
3
BRIDGE
4 x 1N4007
R9 (*)
1.82M
C1
560nF
400V
R10
10K
C2
22
μ
F
25V
FUSE 2A/250V
Vac
(175V to 265V)
R3 (*)
440K
D3 1N4150
D2
1N5248B
R2
100
10nF
C6
R1
T
5
6
L6561
7
2
1
C3 1
μ
F
R5
MOS
STP5NA50
D1 BYT13-600
R7 (*)
998K
C5
56
μ
F
450V
Vo=400V
Po=120W
+
-
D97IN550B
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8)
primary 90T of Litz wire 10 x 0.2mm
secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH
R6 (*)
0.41
1W
R8
6.34K
1%
+
-
C7
10nF
NTC
(*) R3 = 2 x 220K
R6 = 0.82
/2
R7 = 2 x 499K
, 1%
R9 = 2 x 909K
4
68K
10
8
3
BRIDGE
4 x 1N4007
R9 (*)
1.24M
C1
1
μ
F
400V
R10
10K
C2
22
μ
F
25V
FUSE 4A/250V
Vac
(85V to 265V)
R3 (*)
240K
D3 1N4150
D2
1N5248B
R2
100
12nF
C6
R1
T
5
6
L6561
7
2
1
C3 1
μ
F
R5
MOS
STP8NA50
D1 BYT13-600
R7 (*)
998K
C5
47
μ
F
450V
Vo=400V
Po=80W
+
-
D97IN553B
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8)
primary 90T of Litz wire 10 x 0.2mm
secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH
R6 (*)
0.41
1W
R8
6.34K
1%
+
-
C7
10nF
NTC
(*) R3 = 2 x 120K
R6 = 0.82
/2
R7 = 2 x 499K
, 1%
R9 = 2 x 620K
4
68K
10
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