參數(shù)資料
型號: L6561D013TR
廠商: 意法半導體
元件分類: 基準電壓源/電流源
英文描述: POWER FACTOR CORRECTOR
中文描述: 功率因數(shù)校正
文件頁數(shù): 2/13頁
文件大?。?/td> 165K
代理商: L6561D013TR
L6561
2/13
Table 2. Absolute Maximum Ratings
Figure 3. Pin Connection
(Top view
)
Table 3. Thermal Data
Table 4. Pin Description
(1) Parameter guaranteed by design, not tested in production.
Symbol
I
Vcc
I
GD
INV, COMP
MULT
CS
ZCD
Pin
8
Parameter
Value
30
Unit
mA
I
q
+ I
Z
; (I
GD
= 0)
Output Totem Pole Peak Current (2
μ
s)
Analog Inputs & Outputs
7
±700
mA
1, 2, 3
-0.3 to 7
V
4
5
Current Sense Input
Zero Current Detector
-0.3 to 7
50 (source)
-10 (sink)
1
0.65
V
mA
mA
W
W
P
tot
Power Dissipation @T
amb
= 50 °C
(DIP-8)
(SO-8)
T
j
Junction Temperature Operating Range
-40 to 150
°C
T
stg
Storage Temperature
-55 to 150
°C
Symbol
Parameter
SO 8
MINIDIP
Unit
R
th j-amb
Thermal Resistance Junction to ambient
150
100
°C/W
N.
1
Name
INV
Function
Inverting input of the error amplifier. A resistive divider is connected between the output
regulated voltage and this point, to provide voltage feedback.
Output of error amplifier. A feedback compensation network is placed between this pin and the
INV pin.
Input of the multiplier stage. A resistive divider connects to this pin the rectified mains. A voltage
signal, proportional to the rectified mains, appears on this pin.
Input to the comparator of the control loop. The current is sensed by a resistor and the resulting
voltage is applied to this pin.
Zero current detection input. If it is connected to GND, the device is disabled.
Current return for driver and control circuits.
Gate driver output. A push pull output stage is able to drive the Power MOS with peak current of
400mA (source and sink).
Supply voltage of driver and control circuits.
2
COMP
3
MULT
4
CS
5
6
7
ZCD
GND
GD
8
V
CC
INV
COMP
MULT
CS
1
3
2
4
ZCD
GND
GD
V
CC
8
7
6
5
DIP8
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