- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384585 > L6385D (意法半導(dǎo)體) HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER PDF資料下載
參數(shù)資料
| 型號： | L6385D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高壓高端和低端驅(qū)動 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | L6385D |
leakage losses.
e.g.: HVG steady state consumption is lower than
200
μ
A, so if HVG T
ON
is 5ms, C
BOOT
has to
supply 1
μ
C to C
EXT
. This charge on a 1
μ
F ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
charge
) of the C
BOOT
is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the
Figure 4. Bootstrap Driver.
drop on the bootstrap DMOS:
V
drop
=
I
charge
R
dson
→
V
drop
=
Q
gate
T
charge
R
dson
where Q
gate
is the gate charge of the external
power MOS, R
dson
is the on resistance of the
bootstrap DMOS, and T
charge
is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the T
charge
is 5
μ
s. In fact:
V
drop
=
30nC
5
μ
s
125
~
0.8V
V
drop
has to be taken into account when the volt-
age drop on C
BOOT
is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
TO LOAD
D99IN1056
H.V.
HVG
a
b
LVG
HVG
LVG
C
BOOT
TO LOAD
H.V.
C
BOOT
D
BOOT
V
BOOT
V
S
V
S
V
OUT
V
BOOT
V
OUT
-45
-25
0
25
Tj (°C)
50
75
100
125
0
50
100
150
200
250
T
Typ.
@ Vcc = 15V
Figure 5. Turn On Time vs. Temperature
-45
-25
0
25
Tj (°C)
50
75
100
125
0
50
100
150
200
250
T
Typ.
@ Vcc = 15V
Figure 6. Turn Off Time vs. Temperature
L6385
5/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6386D | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| L6387 | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| L6387D | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| L6452 | DUAL 13X16 MATRIX HEAD INK JET DRIVER |
| L6561D013TR | POWER FACTOR CORRECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6385D013TR | 功能描述:功率驅(qū)動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385E | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385ED | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385ED013TR | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6386 | 功能描述:功率驅(qū)動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。