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參數(shù)資料
| 型號： | L6385D |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高壓高端和低端驅(qū)動 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | L6385D |
HIN
HVG
LVG
LIN
D99IN1053
Figure 1. Input/Output Timing Diagram
For both high and low side buffers @25C Tamb
0
1
2
3
4
5
C (nF)
0
50
100
150
200
250
time
(nsec)
Tr
D99IN1054
Tf
Figure 2. Typical Rise and Fall Times vs.
Load Capacitance
0
2
4
6
8
10
12
14
16 V
S
(V)
10
10
2
10
3
10
4
Iq
(
μ
A)
D99IN1055
Figure 3. Quiescent Current vs. Supply
Voltage
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6385 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging
:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total
gate charge :
C
EXT
=
Q
gate
V
gate
The ratio between the capacitors C
EXT
and C
BOOT
is proportional to the cyclical voltage loss .
It has to be:
C
BOOT
>>>C
EXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is
3nF. With C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selection has to take into account also the
L6385
4/9
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| L6385D013TR | 功能描述:功率驅(qū)動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385E | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385ED | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6385ED013TR | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6386 | 功能描述:功率驅(qū)動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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