參數(shù)資料
型號(hào): L6213
廠商: 意法半導(dǎo)體
英文描述: SOLENOID DRIVER SWITCH MODE POWER SUPPLY
中文描述: 電磁驅(qū)動(dòng)開關(guān)電源
文件頁數(shù): 5/9頁
文件大?。?/td> 136K
代理商: L6213
ELECTRICALCHARACTERISTICS
(continued)
Pin
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
POWER FAIL
10
10
10
8
8
8
8
7
V
thR
V
thF
V
th
I
PFI
V
th-PFP
V
th-PFP
V
th -PFP
V
sat
Rising Threshold Voltage
Falling Threshold Voltage
Threshold Hysteresis
Divided Internal Current
Rising Threshold Voltage
Falling Threshold Voltage
Threshold Hysteresis
Output PF Saturation
PFP open
PFP open
PFP open
Fig. 1
Fig. 1
Fig. 1
19.5
16.6
0.5
20
18.1
23
19.5
V
V
V
μ
A
V
V
mV
V
130
1.29
1.13
VPS = 24V
VPS = 24V
VPS = 24V
PF current = 2.5mA
VPS = 3 to 46V
VPS = 46V VPF = 20V
RESET High to PF high
Delay Time (fig. 1)
When VPS drops to 8V for a
time from 0 to t2, PF must be
at 1 logic level (fig. 2)
When VPS drops to 17V for
a time greater than t3, PF
must be at 0 logic level (fig. 2)
1.1
0.98
30
1.21
1.06
0.4
7
7
I
leak
t1
Output Leakage Current
Delay to Reset
50
1
μ
A
μ
s
0
7
t2
Noise Immunity
0
1
μ
s
7
t3
Noise Immunity
4
μ
s
RESET
9
9
13
I
d
I
d
Delay Source Current
Delay Sink Current
Output RESET Saturation
V
D
= 0 to 4.1V
VD = 4.3 to 2V
RESET Current = 2.5mA
VPS = 3to 46V
VPS = 46V RD = 4 to 5V
V
RESET
= 20V
When VPS drops to 10V for a
time greater thant4 RESET
must be at 0logic level (fig. 1)
70
10
140
μ
A
mA
V
V
sat
0.4
13
I
leak
Output Leakage Current
50
μ
A
13
t4
Noise Immunity
4
μ
s
SOLENOID CONTROL SECTION
18
18
18
17
Vsat
I
leak
V
clamp
Saturation Voltage
Leakage Current
Clamp Voltage
Minimum Offset Threshold
ENABLE = 1 I PIM = 5mA
PIM = 0.2 to 2.5V ENABLE = 0
0.2
+100
2.1
V
μ
A
V
1.9
lower MOS must be in conduction
2
PIM = GND V
sens
= 10mV
ENABLE = 0
PIM = GND V
sens
= 50mV
ENABLE = 0
V
sens
going from 0 to 0.6V
PIM = 3V, the EMH DMOS
goes to high resistance state
when V
sens
is within: (see
Block Diagram)
17
MAximum Offset Voltage
lower MOS must be open
17
V
sense
Static Voltage Limiting
Threshold
0.475
0.5
0.525
V
17
Maximum Delay Time
Protection Time
OnStateDrain toSourceResistance
OnStateDraintoSourceResistance
Vsense Hysteresis
1
4
μ
s
μ
s
mV
mV
mV
t
p
2
EMH R
on
EML R
on
V
sense
T
j
= 25
°
C, VPS 15 to 46V
Tj = 25
°
C, VPS 15 to 46V
IST = Open
IST = 0.75V
IST = 3V
0.35
0.28
50
25
100
0.45
0.4
65
35
120
17
35
15
80
L6213
5/9
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