
CIRCUIT DESCRIPTION
The L6201/1P/2/3 is a monolithic full bridge
switching motor driver realized in the new Mul-
tipower-BCD technologywhich allows the integra-
tion of multiple, isolated DMOS power transistors
plus mixed CMOS/bipolar control circuits. In this
way it has been possible to make all the control
inputs TTL, CMOS and
μ
C compatible and elimi-
nate the necessity of external MOS drive compo-
nents. The Logic Driveis shownin table 1.
Table 1
Inputs
Output Mosfets (*)
V
EN
= H
IN1
IN2
L
L
H
H
L
H
L
H
Sink 1, Sink 2
Sink 1, Source 2
Source 1, Sink 2
Source 1, Source 2
V
EN
= L
X
X
All transistors turned oFF
L =Low
(*) Numbers referred to INPUT1 orINPUT2 controlled output stages
H = High
X = DON’t care
Although the device guarantees the absence of
cross-conduction, the presence of the intrinsic di-
odes in the POWER DMOS structure causes the
generationof current spikes on the sensing termi-
nals. This is due to charge-dischargephenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 14). When the output
switches from high to low, a current spike is gen-
erated associated with the capacitor C1. On the
low-to-high transition a spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(fig.15).
TRANSISTOR OPERATION
ON State
When one of the POWER DMOS transistor is ON
it can be considered as a resistor R
DS (ON)
throughoutthe recommended operating range. In
this condition the dissipatedpower is given by :
P
ON
= R
DS (ON)
I
DS2
(RMS)
The low R
DS (ON)
of the Multipower-BCD process
can provide high currents with low power dissipa-
tion.
OFF State
When one of the POWER DMOS transistor is
OFF the V
DS
voltage is equal to the supply volt-
age and only the leakage current I
DSS
flows. The
powerdissipation during this periodis given by :
P
OFF
= V
S
I
DSS
The power dissipation is very low and is negligible
in comparison to that dissipated in the ON
STATE.
Transitions
Asalready seen above the transistors have an in-
trinsic diode between their source and drain that
can operate as a fast freewheeling diode in
switched mode applications. During recirculation
with the ENABLE input high, the voltage drop
across the transistor is R
DS (ON)
I
D
and when it
reaches the diode forward voltage it is clamped.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culation current. The powerdissipated in the tran-
sitional times in the cycle depends upon the volt-
age-current waveforms and in the driving mode.
(seeFig. 7ab andFig. 8abc).
P
trans.
= I
DS
(t)
V
DS
(t)
Figure14:
IntrinsicStructuresin the POWER
DMOS Transistors
Figure 15:
CurrentTypical Spikes on the Sens-
ing Pin
L6201 - L6201P - L6202 - L6203
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