參數(shù)資料
型號: L5973D
廠商: 意法半導(dǎo)體
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 8/13頁
文件大?。?/td> 166K
代理商: L5973D
L5973AD
8/13
Figure 5. Driving Circuitry
INHIBIT FUNCTION
The inhibit feature allows to put in stand-by mode the device. With INH pin higher than 2.2V the device is dis-
abled and the power consumption is reduced to less than 100
μ
A. With INH pin lower than 0.8V, the device is
enabled. If the INH pin is left floating, an internal pull up ensures that the voltage at the pin reaches the inhibit
threshold and the device is disabled. The pin is also Vcc compatible.
THERMAL SHUTDOWN
The shutdown block generates a signal that turns off the power stage if the temperature of the chip goes higher
than a fixed internal threshold (150°C). The sensing element of the chip is very close to the PDMOS area, so
ensuring an accurate and fast temperature detection. An hysteresis of approximately 20°C avoids that the de-
vices turns on and off continuously
ADDITIONAL FEATURES AND PROTECTIONS
FEEDBACK DISCONNECTION
In case of feedback disconnection, the duty cycle increases versus the maximum allowed value, bringing the
output voltage close to the input supply. This condition could destroy the load.
To avoid this dangerous condition, the device is turned off if the feedback pin remains floating.
OUTPUT OVERVOLTAGE PROTECTION
The overvoltage protection, OVP, is realized by using an internal comparator, which input is connected to the
feedback, that turns off the power stage when the OVP threshold is reached. This threshold is typically 30%
higher than the feedback voltage.
When a voltage divider is requested for adjusting the output voltage (see test application circuit), the OVP inter-
vention will be set at:
Vgsmax
GATE
STOP
DRIVE
DRAIN
OFF
ON
PDMOS
VOUT
DRAIN
VCC
I
LOAD
C
ESR
D00IN1133
I
OFF
I
ON
ON/OFF
CONTROL
CLAMP
L
V
OVP
1.3
R
--------------------
V
FB
R
2
+
R
2
=
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