參數(shù)資料
型號： L558
廠商： IXYS Corporation
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 5/5頁
文件大?。?/td> 207K
代理商： L558
5 - 5
2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
3
VWI 20-06P1
Transient thermal resistance junction to heatsink
200
600
-di
F
/dt
1000
0
400
800
A/
s
70
80
90
100
110
120
ns
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
0
200
400
600
di
F
/dt
800
A/
μ
s
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
V
200
600
1000
0
400
800
A/
s
0
10
20
30
40
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
nC
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
A
I
RM
Q
r
I
F
V
F
-di
F
/dt
-di
F
/dt
A
V
t
rr
t
fr
A/
μ
s
μ
s
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 10A
Peak reverse current I
RM
versus -di
F
/dt
Reverse recovery charge Q
r
versus -di
F
/dt
Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 20A
I
F
= 10A
I
F
= 5A
Q
r
I
RM
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 20A
I
F
= 10A
I
F
= 5A
t
fr
V
FR
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
8-06A
(Z
is measured using 50 μm
thermal grease)
Fred
Z
thJH
[K/W]
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t(s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Diode
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