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參數(shù)資料
| 型號： | L50NH3LL |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 30V - 0.011ohm - 13A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET |
| 中文描述： | N溝道30V的- 0.011ohm - 13A條-的PowerFLAT（6x5）超低柵極電荷STripFET功率MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 335K |
| 代理商： | L50NH3LL |
STL50NH3LL
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
V
GS(1)
V
GS(2)
I
D(3)
I
D(4)
I
DM(5)
I
D (4)
P
TOT (4)
P
TOT (3)
Drain-source voltage (V
GS
= 0)
30
V
1.
Continuous mode
Gate-source voltage
± 16
V
2.
Guaranteed for test time < 15ms
Gate-source voltage
± 18
V
3.
The value is rated according R
thj-c
and is limited by wire bonding
The value is rated according R
thj-pcb
Pulse width limited by safe operating area
Drain current (continuous) at T
C
= 25°C
27
A
4.
Drain current (continuous) at T
C
=100°C
8.1
A
5.
Drain current (pulsed)
108
A
Drain current (continuous) at T
C
= 25°C
13
A
Total dissipation at T
C
= 25°C
4
W
Total dissipation at T
C
= 25°C
60
W
Derating factor
0.03
W/°C
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
R
thj-case
R
thj-pcb (1)
Thermal resistance junction-case (Drain)
2.08
°C/W
1.
When mounted on FR-4 board of 1inch2, 2oz Cu, t < 10sec
Thermal resistance junction-ambient
31.3
°C/W
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
I
AR
Not-repetitive avalanche current
(pulse width limited by Tj Max)
6
A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iav, Vdd=24V)
800
mJ
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