參數(shù)資料
型號: L29S800F
廠商: Electronic Theatre Controls, Inc.
英文描述: 8MEGABIT (1M】8 /512K】16) 3 VOLT CMOS FLASH MEMERY
中文描述: 8MEGABIT(100萬】8 / 16】為512k)3伏的CMOS閃存MEMERY
文件頁數(shù): 29/54頁
文件大?。?/td> 797K
代理商: L29S800F
L29S800F
PRELIMINARY
A
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
LinkSmart
AC CHARACTERISTICS
29
071802
Read Only Operations Characteristics
Parameter
Symbols
JEDEC
Standard
Description
Test Setup
-70
(Note)
-90
(Note)
-12
(Note)
Unit
t
AVAV
t
RC
Read Cycle Time
Min.
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE
= V
IL
OE
= V
IL
Max.
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE
= V
IL
Max.
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
25
30
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
25
30
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE
or
OE
, Whichever Occurs First
Min.
0
0
0
ns
t
READY
RESET
Pin Low to Read Mode
Max.
20
20
20
μ
s
t
ELFL
t
ELFH
CE
or
BYTE
Switching Low or High
Max.
5
5
5
ns
Note:
Test Conditions:
Output Load: 1 TTL gate and 30 pF (L29S800F/-B-70)
1 TTL gate and 100 pF (L29S800F/-B-90/-12)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
Device
Under
Test
C
L
6.2k
IN3064
or Equivalent
3.3V
2.7k
Diodes=IN3064
or Equivalent
Note:1.C
L
=30pF including jig capacitance (-70)
2.C
L
=100pF including jig capacitance(-90/-120)
Figure 4 Test Condition
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