參數(shù)資料
型號(hào)： KTX321U
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR
中文描述： 外延平面PNP晶體管N通道MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 106K
代理商： KTX321U
KTX321U
Revision No : 0
2003. 11. 20
2/6
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25
)
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
-100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100 A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=10mA
25
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=10mA, V
GS
=2.5V
-
4
7
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
8.5
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
3.3
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
9.3
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=5V, I
D
=10mA, V
GS
=0
5V
-
50
-
nS
Turn-off Time
t
off
-
160
-
nS
相關(guān)PDF資料
PDF描述
KTX401E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX402U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX403U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX511T EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTX401E 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX401U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX402U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX403U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX411T 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*