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參數(shù)資料
| 型號(hào)： | KSC5504D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 104K |
| 代理商： | KSC5504D |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
t
fr
Diode Froward Recvery Time
(di/dt=10A
/μ
s)
Test Condition
Min
Typ.
770
870
1.2
10
3
Max.
Units
ns
ns
μ
s
V
V
I
F
=0.4A
I
F
=1A
I
F
=2A
I
C
=1A,
I
B1
=100mA
V
CC
=300V
I
C
=2A,
I
B1
=400mA
V
CC
=300V
V
CE
(DSAT)
Dynamic Saturation Voltage
@ 1
μ
s
@ 3
μ
s
@ 1
μ
s
@ 3
μ
s
10
2
V
V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40
μ
s)
t
ON
Turn ON Time
I
C
=2A, I
B1
=0.4A
I
B2
=1A,
V
CC
=300V
R
L
= 150
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
160
170
1.5
1.7
125
160
170
175
2.8
3.1
400
850
250
ns
ns
μ
s
μ
s
ns
ns
ns
ns
μ
s
μ
s
ns
ns
t
STG
Storage Time
2.5
t
F
Fall Time
300
t
ON
Turn ON Time
I
C
=2A, I
B1
=0.4A
I
B2
=0.4A,
V
CC
=300V
R
L
= 150
300
t
STG
Storage Time
3.5
t
F
Fall Time
650
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=2A, I
B1
=0.4A
I
B2
=1A, V
Z
=300V
L
C
=200H
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
1.75
2.2
100
100
210
250
3.6
4.2
170
320
540
1.1
2.5
μ
s
μ
s
ns
ns
ns
ns
μ
s
μ
s
ns
ns
ns
ns
t
F
Fall Time
250
t
C
Cross-over Time
400
t
STG
Storage Time
I
C
=2A, I
B1
=0.4A
I
B2
=0.4A,
V
CC
=300V
L
C
=200H
4.5
t
F
Fall Time
350
t
C
Cross-over Time
800
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KSC5504DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5504DTM | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED D2PAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5504DTTU | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
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