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參數(shù)資料
| 型號： | KSC5504D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 104K |
| 代理商： | KSC5504D |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cut-off Current
Test Condition
I
C
=1mA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500
μ
A, I
C
=0
V
CES
=1200V,
V
BE
=0
V
CE
=600V, I
B
=0
Min.
1200
600
12
Typ.
1350
750
13.7
Max.
Units
V
V
V
μ
A
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
100
500
100
500
10
35
I
CEO
Collector Cut-off Current
μ
A
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
EB
=12V, I
C
=0
V
CE
=1V, I
C
=0.5A
μ
A
15
10
4
3
12
8
20
13
6
4.1
18
10
0.28
0.5
0.18
0.3
0.5
2.0
0.77
0.60
0.85
0.70
600
75
11
0.83
0.7
0.88
0.8
V
CE
=1V, I
C
=2A
V
CE
=2.5V, I
C
=1A
30
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.5A,
I
B
=0.05A
I
C
=1A, I
B
=0.2A
0.6
1.0
0.5
0.75
1.5
3.0
1.0
0.9
1.2
1.0
750
100
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
V
I
C
=2A, I
B
=0.4A
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=0.8A,
I
B
=0.08A
I
C
=2A, I
B
=0.4A
C
ib
C
ob
f
T
V
F
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
V
EB
=10V, I
C
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.5A,V
CE
=10V
I
F
=1A
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
1.3
I
F
=2A
1.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSC5504DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5504DTM | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED D2PAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5504DTTU | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
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