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參數(shù)資料
| 型號： | KP023J |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 800mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 800mW的GaAs功率場效應管（無鉛型） |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 623K |
| 代理商： | KP023J |
Application Circuit : 2110-2170MHz
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-7-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
C1
C5
R1
C2
L1
C3
L2
C4
RF in (Rs=50
)
RF out (RL=50
)
Vd
Vg
D.U.T
Z1
Z2
Z3
Z4
RF in
KP023J
RF out
Vd
(+6V)
Vg
(-0.7~-2V)
C3
R1
C2
C1
C5
L2
C4
L1
Ref. Des.
Value
Part Number
SUSUMU
RR0816 series
R1
82
C1
C2
C3
C4
C5
L1
L2
1pF
1pF
0.1μF
4pF
0.1μF
27nH
27nH
MURATA
GRM18 series
TOKO LL1608
series
Ref.
Designator
Z1
Z2
Z3
Z4
All microstrip lines have a line impedance of 50
.
Electrical length
@ 2.1GHz (deg)
4.08
13.61
8.62
6.38
1.9
2
2.1
2.2
2.3
Frequency (GHz)
-30
-20
-10
0
10
20
S11
S22
S12
S21
S
相關PDF資料 |
PDF描述 |
|---|---|
| KP024J | 1.5W GaAs Power FET (Pb-Free Type) |
| KP027J | 250mW GaAs Power FET (Pb-Free Type) |
| KP028J | 1W GaAs Power FET (Pb-Free Type) |
| KP029J | 2W GaAs Power FET (Pb-Free Type) |
| KP035J | 500mW InGaP HBT Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KP024J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| KP027J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| KP028J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| KP029J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
| KP02E | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:CIT SWITCH |
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