參數(shù)資料
型號(hào): KMM965G512
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx64 SGRAM SODIMM(512Kx64 圖形RAM模塊)
中文描述: 512Kx64 SGRAM個(gè)SODIMM(512Kx64圖形內(nèi)存模塊)
文件頁數(shù): 2/15頁
文件大小: 148K
代理商: KMM965G512
SGRAM MODULE
KMM965G512BQ(P)N / KMM966G512BQ(P)N
ELECTRONICS
- 3 -
Rev. 2.5 (July. 1998)
The Samsung KMM965(6)G512BQ(P)N is a 512bit x 64 Syn-
chronous Graphic RAM high density memory module. The
Samsung KMM965(6)G512BQ(P)N consists of four CMOS
256K x 32 bit Synchronous Graphic RAMs in 100pin QFP
packages mounted on a 144pin glass-epoxy substrate. Five
0.1uF decoupling capacitors are mounted on the printed circuit
board for each Synchronous GRAM.
The KMM965(6)G512BQ(P)N is a Small Outline Dual In-line
Memory Module and is intended for mounting into 144-pin
edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies and burst lengths allows the same device to be useful for a
variety of high bandwidth, high performance memory system
applications.
FEATURES
Performance Range
GENERAL DESCRIPTION
KMM965G512BQ(P)N / KMM966G512BQ(P)N SGRAM SODIMM
512Kx64 SGRAM SODIMM based on 256Kx32, 1K Refresh, 3.3V Synchronous Graphic RAMs
PIN NAMES
**
These pins should be NC in the system
which does not support SPD.
Pin Name
A0 ~ A8
BA(A9)
DQ0 ~ 63
CLK0, CLK1
CKE
CS0, CS1
RAS
CAS
WE
DSF
DQM0 ~ 7
V
DD
V
SS
**SDA
**SBA
**SCL
RSVD
RFU
NC
Function
Address Input(multiplexed)
Bank Select Address
Data Input / Output
Clock Input
Clock Enable Input
Chip Select Input
Row Address Strobe
Column Address Strobe
Write Enable
Define Special Function
DQM
Power Supply (3.3V)
Ground
Serial Address Data I/O
EEPROM Device Address
Serial Clock
Reserved
Reserved for future use
No Connection
SAMSUNG ELECTRONICS CO. Ltd. reserves the right to change products and specifications without notice.
* KM965(6)G512BQN : based on PQFP Component
KM965(6)G512BPN : based on TQFP Component
Burst Mode Operation
BLOCK-WRITE and Write-per-bit capability
Independent byte operation via DQM0~7
Auto & Self Refresh Capability (1024cycles / 16ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
CAS Latency (2, 3)
Burst Length (1, 2, 4, 8 & Full page)
Data Scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Optional Serial PD with EEPROM(KMM966G512B)
Resistor Strapping Options for speed and CAS Latency
PCB : Height(1250mil
)
, double sided components
Part NO.
Max. Freq. (t
CC
)
143MHz (7ns) @CL=3
125MHz (8ns) @CL=3
100MHz (10ns) @CL=3
KMM965(6)G512BQ(P)N-G7
KMM965(6)G512BQ(P)N-G8
KMM965(6)G512BQ(P)N-G0
PIN CONFIGURATIONS (Front Side / Back Side)
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
Front
V
SS
DQ63
DQ61
DQ59
DQ57
V
DD
DQ55
DQ53
DQ51
DQ49
V
SS
DQM7
DQM5
V
DD
DQ47
DQ45
DQ43
DQ41
V
SS
DQ39
DQ37
DQ35
DQ33
V
DD
RSVD
Pin
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Back
V
SS
DQ62
DQ60
DQ58
DQ56
V
DD
DQ54
DQ52
DQ50
DQ48
V
SS
DQM6
DQM4
V
DD
DQ46
DQ44
DQ42
DQ40
V
SS
DQ38
DQ36
DQ34
DQ32
V
DD
RSVD
Pin
Front
Pin
Back
Pin
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Front
DQ31
DQ29
DQ27
DQ25
V
SS
DQ23
DQ21
DQ19
DQ17
V
DD
DQM3
DQM1
V
SS
DQ15
DQ13
DQ11
DQ9
V
DD
DQ7
DQ5
DQ3
DQ1
V
SS
**SDA
V
DD
Pin
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Back
DQ30
DQ28
DQ26
DQ24
V
SS
DQ22
DQ20
DQ18
DQ16
V
DD
DQM2
DQM0
V
SS
DQ14
DQ12
DQ10
DQ8
V
DD
DQ6
DQ4
DQ2
DQ0
V
SS
**SCL
V
DD
Voltage Key
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
RSVD
RSVD
V
SS
DSF
RFU
RFU
V
DD
CS1
RAS
WE
V
SS
CLK1
V
DD
RSVD
RSVD
(A11)
BA(A9)
A7
V
SS
A5
A3
A1
V
DD
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
RSVD
RSVD
V
SS
RFU
RFU
**SBA
V
DD
CS0
CAS
CKE
V
SS
CLK0
V
DD
RSVD
RSVD
(A10)
A8/AP
A6
V
SS
A4
A2
A0
V
DD
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