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參數(shù)資料
| 型號(hào)： | KMM53616004BK |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| 中文描述： | 1,600 × 36的DRAM上海藥物研究所利用16Mx4 |
| 文件頁(yè)數(shù)： | 19/19頁(yè) |
| 文件大?。?/td> | 415K |
| 代理商： | KMM53616004BK |
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DRAM MODULE
KMM53616004BK/BKG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
.125(3.17)
MIN
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold/Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
.100(2.54)
MIN
.350(8.89)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
1.250(31.75)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ
DRAM Part No. : KMM53616004BK/BKG -- KM44C16104BK
KM41C16004CK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM53616004CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004CKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM5362203C2W | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362203C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM53616004BKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM5362203C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362203C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
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