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參數(shù)資料
| 型號： | KMM377S3323T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx72 SDRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| 中文描述： | 32Mx72 SDRAM的內(nèi)存（32M × 72配置動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 202K |
| 代理商： | KMM377S3323T |
SDRAM MODULE
KMM377S3323T
REV. 3 Aug '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
Operating current
(One bank active)
I
CC1
Burst length =1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
1,550
1,450
1,450
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
20
mA
3
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
20
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
270
mA
3
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
128
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
90
mA
3
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
90
Active standby current in
non power-down mode
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
540
mA
3
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
360
mA
3
Operating current
(Burst mode)
I
CC4
I
OL
= 0mA
Page Burst
2 Banks activated
t
CCD
=2CLK
3
1,820
1,590
1,590
mA
1
2
1,500
1,590
1,500
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
3,600
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
28
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
Notes :
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