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參數(shù)資料
| 型號(hào)： | KMM375S823BT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx72 SDRAM DIMM(8Mx72 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 8Mx72 SDRAM的內(nèi)存（8Mx72動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 151K |
| 代理商： | KMM375S823BT |
REV. 4 April. '98
Preliminary
KMM375S823BT
SDRAM MODULE
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-0
Operating Current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
1,090 1,000
1,000
960
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
11
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
11
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
137
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
38
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
20
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
20
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
227
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
137
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
t
CCD
= 2CLKs
3
1,270 1,090
1,090 1,090
mA
1
2
1,000 1,090
1,000
960
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
1,350
1,210
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
11
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 2 Drive ICs.
Notes :
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