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參數資料
| 型號： | KMM366S1723TL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx64 SDRAM DIMM(16Mx64 動態(tài) RAM模塊) |
| 中文描述： | 16Mx64 SDRAM的內存（16Mx64動態(tài)內存模塊） |
| 文件頁數： | 5/10頁 |
| 文件大?。?/td> | 113K |
| 代理商： | KMM366S1723TL |
PC66 SDRAM MODULE
KMM366S1723TL
REV. 0 Mar. '98
Preliminary
1. Measured with outputs open.
2. Refresh period is 64ms.
Note :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-0
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
840
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
8
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
120
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
56
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
40
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
40
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
240
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
160
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA
Page Burst
2Banks Activated
t
CCD
= 2CLKs
3
1,000
mA
1
2
920
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
1,320
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
12
mA
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