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參數(shù)資料
| 型號： | KMM366F410CK1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 64 DRAM DIMM(4M x 64 動態(tài) RAM模塊) |
| 中文描述： | 4米× 64的DRAM內存（4米× 64動態(tài)內存模塊） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 384K |
| 代理商： | KMM366F410CK1 |
DRAM MODULE
KMM366F410CK1
KMM366F400CK1
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle,
t
HPC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
16
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V at pulse width
≤
15ns which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Item
Symbol
Min
3.0
0
2.0
-0.3
*2
Typ
Max
3.6
0
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
CC
V
SS
V
IH
V
IL
3.3
0
-
-
V
CC
+0.3
*1
0.8
V
V
V
V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM366F400CK1
Min
KMM366F410CK1
Min
-
-
-
-
-
-
-
-
-
-
-80
-5
2.4
-
Unit
Max
1440
1280
16
1440
1280
1280
1120
8
1440
1280
80
5
-
0.4
Max
1760
1600
16
1760
1600
1440
1280
8
1760
1600
80
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-80
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KMM366S1623AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623BT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE |
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