參數(shù)資料
型號: KMB7D1DP30QA
廠商: KEC Holdings
英文描述: Dual P-Ch Trench MOSFET
中文描述: 雙P溝道MOSFET通道
文件頁數(shù): 2/5頁
文件大?。?/td> 484K
代理商: KMB7D1DP30QA
2007. 4. 17
2/5
KMB7D1DP30QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DS
=-10 A, V
GS
=0V,
-30
-
-
V
Drain Cut-off Current
I
DSS
V
GS
=0V, V
DS
=-30V
-
-
-1
A
V
GS
=0V, V
DS
=-30V, Tj=55
-
-
-25
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=-250 A
-1
-
-3
V
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=-10V, I
D
=-7.1A
-
20
25
m
V
GS
=-4.5V, I
D
=-5.5A
-
33
41
Forward Transconductance
g
fs
*
V
DS
=-10V, I
D
=-7.1A
-
20
-
S
Dynamic
Input Capaclitance
C
iss
V
DS
=15V, f=1MHz, V
GS
=OV
-
1550
-
pF
Ouput Capacitance
C
oss
-
420
-
Reverse Transfer Capacitance
C
rss
-
380
-
Total Gate Charge
Q
g
*
V
DS
=-15V, V
GS
=-10V, I
D
=-7.1A
-
33
50
nC
Gate-Source Charge
Q
gs
*
-
5.4
-
Gate-Drain Charge
Q
gd
*
-
8.9
-
Turn-On Delat Time
t
d(on)
*
V
DD
=-15V, V
GS
=-10V
I
D
=-1A, R
G
=6
-
9
15
ns
Turn-On Rise Time
t
r
*
-
12
20
Turn-On Deley Time
t
d(off)
*
-
60
90
Turn-On Fall Time
t
r
*
-
34
50
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=-1.7A
-
-0.8
-1.2
V
* : Pulse Test : Pulse width <300
, Duty cycle < 2%
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