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參數(shù)資料
| 型號(hào)： | KMB4D0N30SA |
| 廠商： | KEC Holdings |
| 英文描述： | N-Ch Trench MOSFET |
| 中文描述： | N溝道溝道MOSFET |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 484K |
| 代理商： | KMB4D0N30SA |
2007. 4. 17
2/5
KMB4D0N30SA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DS
=250 A, V
GS
=0V,
30
-
-
V
Drain Cut-off Current
I
DSS
V
GS
=0V, V
DS
=30V
-
-
0.5
A
V
GS
=0V, V
DS
=30V, Tj=55
-
-
10
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=250 A
1.0
-
3.0
V
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=10V, I
D
=3.5A
-
38
47
m
V
GS
=4.5V, I
D
=2.8A
-
52
65
On-State Drain Current
I
D(ON)
*
V
GS
=5V, V
DS
=4.5V
6
-
-
A
Forward Transconductance
g
fs
*
V
DS
=5V, I
D
=2.5A
-
7
-
S
Dynamic
(Note 3)
Input Capaclitance
C
iss
V
DS
=15V, f=1MHz, V
GS
=0V
-
305
-
pF
Ouput Capacitance
C
oss
-
65
-
Reverse Transfer Capacitance
C
rss
-
29
-
Total Gate Charge
Q
g
*
V
DS
=15V, V
GS
=10V, I
D
=2.5A
-
6
9
nC
Gate-Source Charge
Q
gs
*
-
1.6
-
Gate-Drain Charge
Q
gd
*
-
1.0
-
Turn-On Delat Time
t
d(on)
*
V
DD
=15V, V
GS
=10V
I
D
=1A, R
G
=6
(NOTE 1)
-
7
11
ns
Turn-On Rise Time
t
r
*
-
12
18
Turn-On Deley Time
t
d(off)
*
-
14
25
Turn-On Fall Time
t
r
*
-
6
10
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=1.25A
-
0.8
1.2
V
NOTE 1> * : Pulse Test : Pulse width <300
, Duty cycle < 2%
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