參數資料
型號: KMB2D0N60SA
廠商: KEC Holdings
英文描述: N-Ch Trench MOSFET
中文描述: N溝道溝道MOSFET
文件頁數: 2/5頁
文件大?。?/td> 482K
代理商: KMB2D0N60SA
2007. 4. 17
2/5
KMB2D0N60SA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DS
=250 A, V
GS
=0V,
60
-
-
V
Drain Cut-off Current
I
DSS
V
GS
=0V, V
DS
=60V
-
-
0.5
A
V
GS
=0V, V
DS
=60V, Tj=55
-
-
10
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=250 A
1.5
-
-
V
2Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=10V, I
D
=2A
-
125
160
m
V
GS
=4.5V, I
D
=1.7A
-
155
220
On-State Drain Current
I
D(ON)
*
V
GS
10V, V
DS
=4.5V
6
-
-
V
GS
4.5V, V
DS
=4.5V
4
-
-
Forward Transconductance
g
fs
*
V
DS
=4.5V, I
D
=2.0A
-
4.6
-
S
Dynamic
Input Capaclitance
C
iss
V
DS
=25V, f=1MHz, V
GS
=OV
-
240
-
pF
Ouput Capacitance
C
oss
-
50
-
Reverse Transfer Capacitance
C
rss
-
15
-
Total Gate Charge
Q
g
*
V
DS
=30V, V
GS
=10V, I
D
=2A
-
4.8
10
nC
Gate-Source Charge
Q
gs
*
-
0.8
-
Gate-Drain Charge
Q
gd
*
-
1.0
-
Turn-On Delat Time
t
d(on)
*
V
DD
=30V, V
GS
=4.5V
I
D
=-1A, R
G
=6
(NOTE 1)
-
7
15
ns
Turn-On Rise Time
t
r
*
-
10
20
Turn-On Deley Time
t
d(off)
*
-
17
35
Turn-On Fall Time
t
r
*
-
6
15
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=1A
-
0.77
1.2
V
NOTE 1> * : Pulse Test : Pulse width <300
, Duty cycle < 2%
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