參數(shù)資料
型號(hào)： KMA3D0N20SA
廠商： KEC Holdings
英文描述： N-Ch Trench MOSFET
中文描述： N溝道溝道MOSFET
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 483K
代理商： KMA3D0N20SA
2007. 4. 17
2/5
KMA3D0N20SA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DS
=250 A, V
GS
=0V,
20
-
-
V
Drain Cut-off Current
I
DSS
V
GS
=0V, V
DS
=16V
-
-
1
A
Gate Leakage Current
I
GSS
V
GS
=
10V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=250 A
0.5
0.8
1.5
V
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=4.5V, I
D
=2.5A
-
50
60
m
V
GS
=2.5V, I
D
=1A
-
90
120
On-State Drain Current
I
D(ON)
*
V
GS
=4.5V, V
DS
=5V
8
-
-
A
Forward Transconductance
g
fs
*
V
DS
=5V, I
D
=2.5A
-
6
-
S
Dynamic
Input Capaclitance
C
iss
V
DS
=10V, V
GS
= 0V, f=1MHz,
-
330
-
pF
Ouput Capacitance
C
oss
-
110
-
Reverse Transfer Capacitance
C
rss
-
60
-
Total Gate Charge
Q
g
*
V
DS
=10V, V
GS
=4.5V, I
D
=2.5A
-
4.7
-
nC
Gate-Source Charge
Q
gs
*
-
1.6
-
Gate-Drain Charge
Q
gd
*
-
1.3
-
Turn-On Delat Time
t
d(on)
*
V
DD
=10V, V
GS
=4.5V
I
D
=1A, R
G
=6
(NOTE 1)
-
9.2
-
ns
Turn-On Rise Time
t
r
*
-
6.8
-
Turn-On Deley Time
t
d(off)
*
-
6.1
-
Turn-On Fall Time
t
r
*
-
8.3
-
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=1.25A
-
0.81
1.2
V
NOTE 1> * : Pulse Test : Pulse width <300
, Duty cycle < 2%
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