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參數(shù)資料
| 型號(hào)： | KM718V895 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
| 中文描述： | 256Kx18同步SRAM（256Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 6/15頁(yè) |
| 文件大?。?/td> | 314K |
| 代理商： | KM718V895 |
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KM718V895
256Kx18 Synchronous SRAM
- 6 -
Rev 1.0
May 1998
ABSOLUTE MAXIMUM RATINGS*
*NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+ 0.5
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
PASS-THROUGH TRUTH TABLE
NOTE
: 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
Previous Cycle
Present Cycle
Next Cycle
Operation
WRITE
Operation
CS
1
WRITE
OE
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
Initiate Read Cycle
Address=An
Data=Qn-1 for all bytes
L
H
L
Read Cycle
Data=Qn
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=Qn-1 for all bytes
H
H
L
No carryover from
previous cycle
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=High-Z
H
H
H
No carryover from
previous cycle
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
Initiate Read Cycle
Address=An
Data=Qn-1 for one byte
L
H
L
Read Cycle
Data=Qn
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
No new cycle
Data=Qn-1 for one byte
H
H
L
No carryover from
previous cycle
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
2.37
2.5
2.9
V
Ground
V
SS
0
0
0
V
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*NOTE
: Sampled not 100% tested.
Parameter
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
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