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參數(shù)資料
| 型號： | KM29W32000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 20/26頁 |
| 文件大小： | 316K |
| 代理商： | KM29W32000IT |
KM29W32000T, KM29W32000IT
FLASH MEMORY
20
Figure 5. Sequential Row Read1 Operation
Figure 4. Read2 Operation
50H
A
0
~ A
3
& A
9
~ A
21
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
1st half array 2nd half array
Data Field
Spare Field
(SE=L, 00H Command)
1st half array 2nd half array
Data Field
Spare Field
00H
01H
A
0
~ A
7
& A
9
~ A
21
I/O
0
~
7
R/B
Start Add.(3Cycle)
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
(A
4
~ A
7
:
Don't Care)
1st
2nd
Nth
(SE=L, 01H Command)
1st half array 2nd half array
Data Field
Spare Field
1st
2nd
Nth
(SE=H, 00H Command)
1st half array 2nd half array
Data Field
Spare Field
1st
2nd
Nth
I/O
0
~
7
RE
t
R
t
R
t
R
t
R
≈
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