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參數資料
| 型號： | KM29W32000AIT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數： | 6/17頁 |
| 文件大?。?/td> | 239K |
| 代理商： | KM29W32000AIT |
KM29W32000AT, KM29W32000AIT
FLASH MEMORY
READ1 OPERATION
(INTERCEPTED BY CE)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
Busy
00h or 01h A
0
~ A
7
A
9
~ A
16
A
17
~ A
21
Dout N
Dout N+1
Dout N+2
Dout N+3
Page(Row)
Address
Address
Column
t
WB
t
AR2
t
CHZ
t
R
t
RR
t
RC
READ2 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
50H
A
0
~ A
7
A
9
~ A
16
A
17
~ A
21
Dout
511+M
Dout 527
M Address
A
0
~ A
3
:Valid Address
A
4
~ A
7
:Don't care
Dout
511+M+1
Selected
Row
Start
address M
512
16
t
AR2
t
R
t
WB
t
RR
≈
≈
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| KM29W32000AT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
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| KM29W32000IT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
| KM29W32000T | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲器) |
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