- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374352 > KM29V32000T (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | KM29V32000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 9/26頁 |
| 文件大?。?/td> | 316K |
| 代理商： | KM29V32000T |
KM29V32000T, KM29V32000IT
FLASH MEMORY
9
Identifying Invalid Block(s) in the KM29V32000
INVALID BLOCKS
The KM29V32000 Flash device may or may not contain up to 10 invalid blocks. Invalid blocks are defined as blocks that contain on e
or more invalid bits. Typically, an invalid block will contain a single bad bit. Devices with invalid block(s) have the same qu ality levels
as devices with all valid blocks and havet the same AC and DC characteristics. An invalid block(s) does not affect the performan ce of
valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design mus t be
able to mask out the invalid block(s) via address mapping. The 1st block of the KM29V32000, however, is fully guaranteed to be a
good block.
KM29V32000 Technical Notes
All device locations are erased(FFh) prior to shipping. Device with invalid Block(s) will be randomly written with 00h data with in the
first or second page in the invalid Block(s). This page may or may not contain the invalid cell(s). The 00h data just marks the block(s)
that contains the invalid cell(s). A system that can utilize these devices must be able to recognize invalid block(s) via the fo llowing
suggested flow chart
(Figure 1).
Figure 1. Flow chart to create invalid block table.
Start
Set : Block = 0
Check "FF"
Set : Block n + 1
Block = 511
End
Create (or update)
invalid block(s) Table
No
No
Yes
Yes
*
For the 1st or 2nd page
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V64000R | FLASH |
| KM29V64000TS | 8M X 8 BIT NAND FLSH MEMORY |
| KM29V64000T | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 8M X 8 BIT NAND FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V32000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 8 BIT NAND FLASH MEMORY |
| KM29V64000R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH |
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。