參數(shù)資料
型號： KM29V32000T
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
中文描述： 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器）
文件頁數(shù)： 6/26頁
文件大?。?/td> 316K
代理商： KM29V32000T
KM29V32000T, KM29V32000IT
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC1
tcycle=50ns
CE=V
IL
, I
OUT
=0mA
-
10
20
mA
Command, Address Input
I
CC3
tcycle=50ns
-
10
20
mA
Data Input
I
CC4
-
-
10
20
mA
Program
I
CC6
-
-
10
20
mA
Erase
I
CC7
-
-
10
20
mA
Stand-by Current(TTL)
I
SB1
CE=V
IH
, WP=SE=0V/V
CC
-
-
1
mA
Stand-by Current(CMOS)
I
SB2
CE=V
CC
-0.2, WP=SE=0V/V
CC
-
10
50
μ
A
μ
A
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
Input High Voltage
V
IH
I/O pins
2.0
-
V
CCQ
+0.3
V
Except I/O pins
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
Q+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +6.0
V
Temperature Under Bias
KM29V32000T
T
BIAS
-10 to +125
°
C
KM29V32000IT
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29V32000T
:
T
A
=0 to 70
°
C, KM29V32000IT
:
T
A
=-40 to 85
°
C)
NOTE
:
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Supply Voltage
V
CC
Q
1)
V
SS
3.0
-
5.5
V
Supply Voltage
0
0
0
V
相關(guān)PDF資料
PDF描述
KM29V64000R FLASH
KM29V64000TS 8M X 8 BIT NAND FLSH MEMORY
KM29V64000T 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器)
KM29V64001RS 8M X 8 BIT NAND FLASH MEMORY
KM29V64001TS 8M X 8 BIT NAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29V32000TS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 8 BIT NAND FLASH MEMORY
KM29V64000R 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH
KM29V64000TS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY
KM29V64001RS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY
KM29V64001T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY
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