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參數(shù)資料
| 型號(hào)： | KGF2236 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Dual Monolithic GaAs Power FET(雙路單片砷化稼功率場(chǎng)效應(yīng)管) |
| 中文描述： | 雙單片GaAs功率場(chǎng)效應(yīng)管（雙路單片砷化稼功率場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | KGF2236 |
3/9
KGF2236
electronic components
Item
Symbol
V
DSI
V
GSI
I
DSI
P
tot1
T
ch1
V
DS2
V
GS2
I
DS2
P
tot2
T
ch2
T
stg
Conditions
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = Tc = 25°C
—
T a= 25°C
Ta = 25°C
Ta = 25°C
Ta = Tc = 25°C
—
—
Unit
V
V
A
W
°C
V
V
A
W
°C
°C
Min.
—
–6.0
—
—
—
—
–6.0
—
—
—
–45
Max.
8.0
0.4
1.0
2.0
150
8.0
0.4
5.0
5.0
150
150
Notes
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Q1
Q1
Q1
Q1
Q1
Q2
Q2
Q2
Q2
Q2
(Ta=25°C)
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: f = 835 MHz, V
DS
= 3.5 V, I
DSQ1
= 80 mA, I
DSQ2
= 200 mA, P
IN
= 7 dBm
Item
Symbol
I
GSS1
V
GDO1
I
DSS1
V
GSQ1
R
th1
I
GSS2
V
GDO2
I
DSS2
V
GSQ2
R
th2
Conditions
Unit
mA
V
A
V
°C/W
mA
V
A
V
°C/W
Min.
—
–15
0.4
–2.5
—
—
–15
4.0
–2.8
—
Typ.
—
—
—
—
—
—
—
—
—
—
Notes
Q1
Q1
Q1
Q1
Q1
Q2
Q2
Q2
Q2
Q2
Q1+Q2
Q1+Q2
Gate-source leakage current
Gate-drain cut-off voltage
Drain current
Gate bias Q point
Thermal resistance
Gate-source leakage current
Gate-drain cut-off voltage
Drain current
Gate bias Q point
Thermal resistance
V
GS
= –6 V
I
GD
= –0.3 mA
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 3.5 V, I
DS
= 80 mA
Channel to Case
V
GS
= –6 V
I
GD
= –2.4 mA
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 3.5 V, I
DS
= 200 mA
Channel to Case
Power added efficiency
PAE
*1
%
55
60
(Ta=25°C)
Max.
0.1
—
—
–1.5
50
0.1
—
—
–1.8
20
—
Output Power
P
O
*1
dBm
31.5
—
—
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