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參數(shù)資料
| 型號(hào)： | KGF1313 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Power FET (Plastic Package Type) |
| 中文描述： | 功率場(chǎng)效應(yīng)管（塑料包裝型） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | KGF1313 |
3/7
KGF1313
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: f
= 1.9 GHz, V
DS
= 3.4 V, I
DSQ
= 200 mA
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
7.0
0.4
2.0
Unit
V
V
A
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
4.5
150
125
W
°C
°C
Min.
—
–5.0
—
—
—
–45
Ta = Tc = 25°C
Item
P
O
h
D
G
LIN
R
th
Symbol
I
GSS
Condition
Max.
100
Unit
m
A
Output power
Drain efficiency
Linear gain
Thermal resistance
—
—
—
—
dBm
%
dB
°C/W
Min.
—
27.0
45
—
—
(*1), P
IN
= 20 dBm
(*1), P
IN
= 20 dBm
(*1), P
IN
= 0 dBm
Channel to case
Typ.
—
27.5
50
9.5
15
(Ta = 25°C)
V
GS(off)
Gate-source cut-off voltage
–2.0
V
–3.0
V
DS
= 3 V, I
DS
= 4.0 mA
—
I
DSS
Drain current
—
A
1.3
V
DS
= 1.5 V, V
GS
= 0 V
—
I
DS(off)
Drain-source leakage current
1500
m
A
—
V
DS
= 7 V, V
GS
= –5 V
—
I
GDO
Gate-drain leakage current
500
m
A
—
V
GD
= –12 V
—
Gate-source leakage current
V
GS
= –5 V
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