參數(shù)資料
型號: KGF1322
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: Power FET (Ceramic Package Type)(陶瓷封裝型的功率場效應(yīng)晶體管)
中文描述: 功率場效應(yīng)晶體管(陶瓷封裝型)(陶瓷封裝型的功率場效應(yīng)晶體管)
文件頁數(shù): 1/6頁
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代理商: KGF1322
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KGF1322
electronic components
KGF1322
GENERAL DESCRIPTION
The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band
power FET that features high efficiency, high output power, and low current operation. The
KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz;
external impedance-matching circuits are also required. Because of its high efficiency, high
output power (more than 33 dBm), and low thermal resistance, the KGF1322 is ideal as a
transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.
FEATURES
High output power: 33 dBm (min.)
High efficiency: 60% (min.)
Low thermal resistance: 12
°
C/W (typ.)
Package: 3PHTP
PACKAGE DIMENSIONS
Power FET (Ceramic Package Type)
E2Q0040-27-X3
3.3±0.15
7.3±0.15
2.3±0.05
3.1±0.15
0
0.63±0.15
1.1±0.15
3
1.7
±
0.2
0
(Unit: mm)
4
4
Package material
Lead frame material
Pin treatment
plate thickness
Al
2
0
3
Ni/Au plating
Au:1.0
m
m or more
Fe-Ni-Co alloy
5
This version: Jan. 1998
Previous version: Jun. 1996
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