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參數(shù)資料
| 型號： | KFM1216Q2M-DED |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁數(shù)： | 9/88頁 |
| 文件大?。?/td> | 1150K |
| 代理商： | KFM1216Q2M-DED |
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MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
9
2. GENERAL DESCRIPTION
MuxOneNAND is a single-die chip with Muxed NOR Flash interface using NAND Flash Array. This device is comprised of logic and
NAND Flash Array and 5KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 4KB DataRAM is used for buff-
ering data. The operating clock frequency is up to 54MHz(1.8V device). This device is X16 interface with Host, and has the speed of
~76ns random access time. Actually, it is accessible with minimum 4clock latency(host-driven clock for synchronous read), but this
device adopts the appropriate wait cycles by programmable read latency. MuxOneNAND provides the multiple sector read operation
by assigning the number of sectors to be read in the sector counter register. The device includes one block sized OTP(One Time
Programmable), which can be used to increase system security or to provide identification capabilities.
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| KFN2G16Q2M-DEB5 | MuxOneNAND FLASH MEMORY |
| KFM1G16Q2M | MuxOneNAND FLASH MEMORY |
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| KFM1G16Q2M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFM1G16Q2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFM1G16Q2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
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