參數(shù)資料
型號(hào): KDV275E
廠商: KEC Holdings
英文描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
中文描述: 變?nèi)荻O管外延硅平面二極管(振蕩器的超高頻/甚高頻波段)
文件頁數(shù): 1/2頁
文件大?。?/td> 391K
代理商: KDV275E
2003 1. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV275E
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25
)
ESC
DIM
MILLIMETERS
+
+
+
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30+
0.60+
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13+
F
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Grade
Type Name
Marking
C
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
28
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
20
-
-
V
Reverse Current
I
R
V
R
=16V
-
-
5
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
15.40
16.60
17.90
pF
C
2V
V
R
=2V, f=1MHz
8.50
10.20
11.90
C
4V
V
R
=4V, f=1MHz
3.60
4.30
5.05
Capacitance Ratio
K
C
1V
/C
4V
, f=1MHz
3.4
-
-
Series Resistance
r
S
C
T
=8pF, f=470MHz
-
-
0.7
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C
2V
)
UNIT
A
8.5
9.15
pF
B
9.05~9.85
pF
C
9.75
10.65
pF
D
10.55~11.35
pF
E
11.25~11.90
pF
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