參數(shù)資料
型號(hào)： K9F6408U0M-TIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit NAND Flash Memory
中文描述： 8米× 8位NAND閃存
文件頁(yè)數(shù)： 8/26頁(yè)
文件大小： 347K
代理商： K9F6408U0M-TIB0
K9F6408U0A-TCB0, K9F6408U0A-TIB0
FLASH MEMORY
8
AC Characteristics for Operation
NOTE
:
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ns
ALE to RE Delay( ID read )
t
AR1
100
-
ALE to RE Delay(Read cycle)
t
AR2
50
-
ns
CE to RE Delay( ID read)
t
CR
100
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
30
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
RE Access Time
t
REA
-
35
ns
RE High to Output Hi-Z
t
RHZ
15
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(1)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
RE Low to Status Output
t
RSTO
-
35
ns
CE Low to Status Output
t
CSTO
-
45
ns
WE High to RE Low
t
WHR
60
-
ns
RE access time(Read ID)
t
READID
-
35
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
μ
s
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE Setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
-
ns
ALE Setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data Setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
50
-
ns
WE High Hold Time
t
WH
15
-
ns
相關(guān)PDF資料
PDF描述
K9F6408U0C-B 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-Q 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0B-TCB0 8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB0 8M x 8 Bit NAND Flash Memory
K9F6408U0B 8M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F8008W0M- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8008W0M-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8008W0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8G08U0M-PCK0000 制造商:Samsung 功能描述:K9F8G08U0M-PCK0000NAND FLASH - Trays
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