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參數(shù)資料
| 型號： | K9F6408U0C-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit Bit NAND Flash Memory |
| 中文描述： | 8米× 8位位NAND閃存 |
| 文件頁數(shù)： | 9/26頁 |
| 文件大小： | 347K |
| 代理商： | K9F6408U0C-F |
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K9F6408U0A-TCB0, K9F6408U0A-TIB0
FLASH MEMORY
9
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 6th byte in the spare area.
Samsung makes sure that either the 1st or 2nd page of every invalid
block has non-FFh data at the column address of 517. Since the invalid block information is also erasable in most cases, it is impos-
sible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based
on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 1). Any inten-
tional erasure of the original invalid block information is prohibited.
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND Flash, however, is fully guaranteed to
be a valid block.
NAND Flash Technical Notes
*
Figure 1. Flow chart to create invalid block table.
Start
Set Block Address = 0
Check "FFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Invalid Block(s) Table
No
Check "FFh" at the column address 517
of the 1st and 2nd page in the block
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F6408U0C-H | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TIB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-B | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 8M x 8 Bit Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F6408U0C-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
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