- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374299 > K9F6408U0C-F (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M x 8 Bit Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F6408U0C-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit Bit NAND Flash Memory |
| 中文描述： | 8米× 8位位NAND閃存 |
| 文件頁數(shù)： | 25/26頁 |
| 文件大?。?/td> | 347K |
| 代理商： | K9F6408U0C-F |
K9F6408U0A-TCB0, K9F6408U0A-TIB0
FLASH MEMORY
25
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
Figure 11. AC Waveforms for Power Transition
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by the following equation.
Rp =
V
CC
R/B
open drain output
Device
GND
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
∑
I
L
=
3.2V
8mA
+
∑
I
L
where I
L
is the sum of the input currents of all devices tied to the
R/B pin.
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
Rp
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F6408U0C-H | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TIB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-B | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 8M x 8 Bit Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F6408U0C-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。