參數(shù)資料
型號(hào)： K9F6408Q0C-H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:61; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 8米× 8位位NAND閃存
文件頁數(shù)： 23/29頁
文件大?。?/td> 499K
代理商： K9F6408Q0C-H
FLASH MEMORY
23
K9F6408U0C
K9F6408Q0C
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-
tion. Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than 10
μ
s(tR). The CPU can detect the completion of this data transfer(tR) by analyzing the output of R/B
pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE. High to
low transitions of the RE clock output the data stating from the selected column address up to the last column address(column 511 or
527 depending on the state of GND input pin).
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting 10
μ
s again allows reading the selected page.The sequential row read operation is terminated by bringing CE high. The way
the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to
527 may be selectively accessed by writing the Read2 command with GND input pin low. Addresses A
0
to A
3
set the starting address
of the spare area while addresses A
4
to A
7
are ignored. Unless the operation is aborted, the page address is automatically incre-
mented for sequential row read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1
command(00h/01h) is needed to move the pointer back to the main area. Figures 3 through 6 show typical sequence and timings for
each read operation.
Sequential Row Read is available only on K9F6408U0C_T,Q or K9F6408U0C_V,F :
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10
μ
s
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 5, 6 show typical sequence and timings for sequential row read oper-
ation.
Figure 3. Read1 Operation
Start Add.(3Cycle)
00h
01h
A
0
~ A
7
& A
9
~ A
22
Data Output(Sequential)
(00h Command)
1st half array 2nd half array
Data Field
Spare Field
(01h Command)*
1st half array 2nd half array
Data Field
Spare Field
* After data access on 2nd half array by 01H command, the start pointer is automatically moved to 1st half array (00h) at next cycle.
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
On K9F6408U0C_T,Q or K9F6408U0C_V,F
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F6408U0A-TCB0 TV 32C 32#20 SKT RECP
K9F6408U0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F6408U0C-F 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-H 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0M-TCB0 8M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408U0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
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