參數(shù)資料
型號： K9F6408Q0C-H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:61; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 8米× 8位位NAND閃存
文件頁數(shù)： 2/29頁
文件大?。?/td> 499K
代理商： K9F6408Q0C-H
FLASH MEMORY
2
K9F6408U0C
K9F6408Q0C
GENERAL DESCRIPTION
The K9F6408X0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or
3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro-
grams the 528-byte page in typical 200
μ
s and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the
page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F6408X0C
′
s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algo-
rithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512
bytes can be utilized by system-level ECC. The K9F6408X0C is an optimum solution for large nonvolatile storage applications such
as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9F6408Q0C) : 1.70~1.95V
- 3.3V device(K9F6408U0C) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access
- 1.8V device(K9F6408Q0C) : 50ns
- 3.3V device(K9F6408U0C) : 50ns
Fast Write Cycle Time
- Program Time
- 1.8V device(K9F6408Q0C) : 200
μ
s(Typ.)
- 3.3V device(K9F6408U0C) : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
8M x 8 Bit Bit NAND Flash Memory
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Package
- K9F6408U0C-TCB0/TIB0 :
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- K9F6408Q0C-BCB0/BIB0
48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
- K9F6408U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F6408U0C-QCB0/QIB0 : Pb-free Package
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- K9F6408Q0C-HCB0/HIB0 : Pb-free Package
48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
- K9F6408U0C-FCB0/FIB0 : Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)
* K9F6408U0C-V,F(WSOPI ) is the same device as
K9F6408U0C-T,Q(TSOPII) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F6408Q0C-B,H
1.70 ~ 1.95V
X8
TBGA
K9F6408U0C-B,H
2.7 ~ 3.6V
K9F6408U0C-T,Q
TSOP II
K9F6408U0C-V,F
WSOP I
相關(guān)PDF資料
PDF描述
K9F6408U0A-TCB0 TV 32C 32#20 SKT RECP
K9F6408U0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F6408U0C-F 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-H 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0M-TCB0 8M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408U0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
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